Image sensor with backside passivation and metal layer

Details Image sensor with backside passivation and metal layer Image sensor with backside passivation and metal layer

2011-08-30

2011-08-30

Louie, Wai Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S369000, C257S440000, C257S461000, C257S432000

Reexamination Certificate

active

08008695

ABSTRACT:
An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N−region formed within the P-type region of the semiconductor layer. A P+layer is formed between the N−region of the photodiode and a back surface of the semiconductor layer. A mirror that primarily reflects photons of red and/or infra-red wavelengths is formed on the back surface of the semiconductor layer.

REFERENCES:
patent: 6107107 (2000-08-01), Bruce et al.
patent: 6388301 (2002-05-01), Tawada et al.
patent: 6504196 (2003-01-01), Rhodes
patent: 2003/0025160 (2003-02-01), Suzuki et al.
patent: 2003/0170928 (2003-09-01), Shimozono et al.
patent: 2007/0023799 (2007-02-01), Boettiger
patent: 2007/0138470 (2007-06-01), Alieu et al.
patent: 2008/0283726 (2008-11-01), Uya et al.

Affiliated with

Also associated with

Rating

Image sensor with backside passivation and metal layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor with backside passivation and metal layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor with backside passivation and metal layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2639445