Formation of doped regions and/or ultra-shallow junctions in...

Details Formation of doped regions and/or ultra-shallow junctions in... Formation of doped regions and/or ultra-shallow junctions in...

2005-06-11

2008-08-12

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S513000, C438S514000, C438S515000, C438S516000, C427S523000, C118S72300R

Reexamination Certificate

active

07410890

ABSTRACT:
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

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Isao Yamada, Jiro Matsuo, Noriaki Toyoda and Allen Kirkpatrick, “Materials Proccesing by Gas Cluster Ion Beams”, Materials Science and Engineering Reports, vol. 34, Issue 6, pp. 231-295, Oct. 30, 2001 (ISSN 0927-796X).
K Goto, et al, A High Performance 50nm PMOSFET Using Decaborane (B10H14) Ion Implantation And 2-Step Activation Annealing Process, IEDM Tech . Dig., IEEE (1997) 471.

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