Fluorine plasma treatment of high-k gate stack for defect...

Details Fluorine plasma treatment of high-k gate stack for defect... Fluorine plasma treatment of high-k gate stack for defect...

2011-03-08

2011-03-08

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257SE21625

Reexamination Certificate

active

07902018

ABSTRACT:
Embodiments of the present invention generally provide a method for forming a dielectric material with reduced bonding defects on a substrate. In one embodiment, the method comprises forming a dielectric layer having a desired thickness on a surface of a substrate, exposing the substrate to a low energy plasma comprising a fluorine source gas to form a fluorinated dielectric layer on the substrate without etching the dielectric layer, and forming a gate electrode on the substrate. In certain embodiments, the fluorine source gas is a carbon free gas. In certain embodiments, the method further comprises co-flowing a gas selected from the group consisting of argon, helium, N2, O2, and combinations thereof with the fluorine source gas.

REFERENCES:
patent: 3427514 (1969-02-01), Olmstead et al.
patent: 3594295 (1971-07-01), Meckel et al.
patent: 4043848 (1977-08-01), Bazin
patent: 4096509 (1978-06-01), Blaha et al.
patent: 4262631 (1981-04-01), Kubacki
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4335391 (1982-06-01), Morris
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4439463 (1984-03-01), Miller
patent: 4459739 (1984-07-01), Shepherd et al.
patent: 4495219 (1985-01-01), Kato et al.
patent: 4534826 (1985-08-01), Goth et al.
patent: 4545112 (1985-10-01), Holmberg et al.
patent: 4563367 (1986-01-01), Sherman
patent: 4585516 (1986-04-01), Corn et al.
patent: 4605947 (1986-08-01), Price et al.
patent: 4608063 (1986-08-01), Kurokawa
patent: 4651185 (1987-03-01), Holmberg et al.
patent: 4700458 (1987-10-01), Suzuki et al.
patent: 4725560 (1988-02-01), Abernathey et al.
patent: 4743953 (1988-05-01), Toyokura et al.
patent: 4745082 (1988-05-01), Kwok
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4980307 (1990-12-01), Ito et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5063431 (1991-11-01), Ohshima
patent: 5173442 (1992-12-01), Carey
patent: 5228950 (1993-07-01), Webb et al.
patent: 5292673 (1994-03-01), Shinriki et al.
patent: 5302236 (1994-04-01), Tahara et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5464783 (1995-11-01), Kim et al.
patent: 5582866 (1996-12-01), White
patent: 5619051 (1997-04-01), Endo
patent: 5726087 (1998-03-01), Tseng et al.
patent: 5763922 (1998-06-01), Chau
patent: 5834343 (1998-11-01), Ogasawara et al.
patent: 5840626 (1998-11-01), Ohguro
patent: 5851602 (1998-12-01), Law et al.
patent: 5861197 (1999-01-01), Law et al.
patent: 5865896 (1999-02-01), Nowak et al.
patent: 5874766 (1999-02-01), Hori
patent: 5880508 (1999-03-01), Wu
patent: 5891798 (1999-04-01), Doyle et al.
patent: 5928732 (1999-07-01), Law et al.
patent: 5935373 (1999-08-01), Koshimizu
patent: 5937303 (1999-08-01), Gardner et al.
patent: 5960270 (1999-09-01), Misra et al.
patent: 5976993 (1999-11-01), Ravi et al.
patent: 6008095 (1999-12-01), Gardner et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6023613 (2000-02-01), Kanehara
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6033963 (2000-03-01), Huang et al.
patent: 6041734 (2000-03-01), Raoux et al.
patent: 6043157 (2000-03-01), Gardner et al.
patent: 6049114 (2000-04-01), Maiti et al.
patent: 6054013 (2000-04-01), Collins et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6063704 (2000-05-01), Demirlioglu
patent: 6066533 (2000-05-01), Yu
patent: 6077403 (2000-06-01), Kobayashi et al.
patent: 6083836 (2000-07-01), Rodder
patent: 6087231 (2000-07-01), Xiang et al.
patent: 6090653 (2000-07-01), Wu
patent: 6093590 (2000-07-01), Lou
patent: 6110287 (2000-08-01), Arai et al.
patent: 6117279 (2000-09-01), Smolanoff et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 6136654 (2000-10-01), Kraft et al.
patent: 6140024 (2000-10-01), Misium et al.
patent: 6140688 (2000-10-01), Gardner et al.
patent: 6162709 (2000-12-01), Roux et al.
patent: 6171900 (2001-01-01), Sun
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6184072 (2001-02-01), Kaushik et al.
patent: 6184114 (2001-02-01), Lukanc
patent: 6190513 (2001-02-01), Forster et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207304 (2001-03-01), Law et al.
patent: 6228229 (2001-05-01), Raaijmakers et al.
patent: 6235650 (2001-05-01), Yao
patent: 6244211 (2001-06-01), Nishikawa et al.
patent: 6254738 (2001-07-01), Stimson et al.
patent: 6254746 (2001-07-01), Subramani et al.
patent: 6255231 (2001-07-01), Chen et al.
patent: 6255698 (2001-07-01), Gardner et al.
patent: 6258675 (2001-07-01), Gardner et al.
patent: 6264812 (2001-07-01), Raaijmakers et al.
patent: 6277253 (2001-08-01), Narasimhan et al.
patent: 6287635 (2001-09-01), Cook et al.
patent: 6291282 (2001-09-01), Wilk et al.
patent: 6297107 (2001-10-01), Paton et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6297595 (2001-10-01), Stimson et al.
patent: 6303481 (2001-10-01), Park
patent: 6320238 (2001-11-01), Kizilyalli et al.
patent: 6323555 (2001-11-01), Maex et al.
patent: 6344419 (2002-02-01), Forster et al.
patent: 6345588 (2002-02-01), Simson
patent: 6346465 (2002-02-01), Miura et al.
patent: 6348126 (2002-02-01), Hanawa et al.
patent: 6348386 (2002-02-01), Gilmer
patent: 6352594 (2002-03-01), Cook et al.
patent: 6354593 (2002-03-01), Frommer et al.
patent: 6355108 (2002-03-01), Won et al.
patent: 6358810 (2002-03-01), Dornfest et al.
patent: 6361667 (2002-03-01), Kobayashi et al.
patent: 6365450 (2002-04-01), Kim
patent: 6365518 (2002-04-01), Lee et al.
patent: 6373111 (2002-04-01), Zheng et al.
patent: 6376807 (2002-04-01), Hong et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 6413382 (2002-07-01), Wang et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6436801 (2002-08-01), Wilk et al.
patent: 6444099 (2002-09-01), Sasaki et al.
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6447636 (2002-09-01), Qian et al.
patent: 6448166 (2002-09-01), Cho et al.
patent: 6461483 (2002-10-01), Gopalraja et al.
patent: 6472337 (2002-10-01), Zhuang et al.
patent: 6475854 (2002-11-01), Narwankar et al.
patent: 6475908 (2002-11-01), Lin et al.
patent: 6477980 (2002-11-01), White et al.
patent: 6482752 (2002-11-01), Yamazaki et al.
patent: 6486080 (2002-11-01), Chooi et al.
patent: 6497796 (2002-12-01), Ashtiani et al.
patent: 6500742 (2002-12-01), Chern et al.
patent: 6504214 (2003-01-01), Yu et al.
patent: 6506287 (2003-01-01), Ding
patent: 6506676 (2003-01-01), Park et al.
patent: 6511875 (2003-01-01), Park et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6528856 (2003-03-01), Bai et al.
patent: 6528858 (2003-03-01), Yu et al.
patent: 6541079 (2003-04-01), Bojarczuk, Jr. et al.
patent: 6544906 (2003-04-01), Rotondaro et al.
patent: 6548366 (2003-04-01), Niimi et al.
patent: 6548368 (2003-04-01), Narwankar et al.
patent: 6551446 (2003-04-01), Hanawa et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6610374 (2003-08-01), Tsai et al.
patent: 6610615 (2003-08-01), McFadden et al.
patent: 6617209 (2003-09-01), Chau et al.
patent: 6617266 (2003-09-01), Nickles et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6632747 (2003-10-01), Niimi et al.
patent: 6635964 (2003-10-01), Maex et al.
patent: 6638877 (2003-10-01), Rotondaro
patent: 6641703 (2003-11-01), Nomura et al.
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6652924 (2003-11-01), Sherman
patent: 6653698 (2003-11-01), Lee et al.
patent: 6660134 (2003-12-01), Gopalraja
patent: 6660659 (2003-12-01), Kraus et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6664160 (2003-12-01), Park et al.
patent: 6673724 (2004-01-01), Forster et al.
patent: 6675816 (2004-01-01), Ichijo
patent: 6677254 (2004-01-01), Narwankar et al.
patent: 6682973 (2004-01-01), Paton et al.
patent: 6689646 (2004-02-01), Joshi et al.
patent: 6719883 (2004-04-01), Stimson
patent: 6743473 (2004-06-01), Parkhe et al.
patent: 6759286 (2004-07-01), Kumar et al.
patent: 6765178 (2004-07-01), Shang et al.
patent: 6767824 (2004-07-01), Nallan et

Affiliated with

Also associated with

Rating

Fluorine plasma treatment of high-k gate stack for defect... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fluorine plasma treatment of high-k gate stack for defect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fluorine plasma treatment of high-k gate stack for defect... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2717754