Floating gate and fabricating method of the same

Details Floating gate and fabricating method of the same Floating gate and fabricating method of the same

2005-05-17

2005-05-17

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C257S315000

Reexamination Certificate

active

06893919

ABSTRACT:
A floating gate and a fabricating method of the same. A semiconductor substrate is provided. A gate dielectric layer and a conducting layer are sequentially formed on the semiconductor substrate. A patterned hard mask layer having an opening is formed on the conducting layer, wherein a portion of the conducting layer is exposed through the opening. A spacer is formed on the sidewall of the opening. The patterned hard mask layer is removed. A conducting spacer is formed on the sidewall of the spacer. The exposed conducting layer and the exposed gate dielectric layer are sequentially removed.

REFERENCES:
patent: 6524915 (2003-02-01), Kim et al.
patent: 20040033631 (2004-02-01), Clark et al.

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