Method of manufacturing semiconductor pressure sensor

Details Method of manufacturing semiconductor pressure sensor Method of manufacturing semiconductor pressure sensor

2005-05-03

2005-05-03

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S053000, C438S973000

Reexamination Certificate

active

06887734

ABSTRACT:
In a semiconductor pressure sensor manufacturing method of disposing an etching mask (50) at one-face (11) side of a monocrystal silicon substrate10in which the face-direction of the one face11corresponds to the (110)-face, and then carrying out anisotropic etching to form a recess portion (20) and a diaphragm (30) at the bottom surface side of the recess portion (20), the etching mask (51) is designed to have a cross-shaped opening portion (51) at which a first area extending along the <110> crystal axis direction and a second area extending along the <100> crystal axis direction cross each other, the area of the opening portion (51a) of the overlap area between the first and second areas in the opening portion (51) being set to be smaller than the area of the diaphragm (30).

REFERENCES:
patent: 6595065 (2003-07-01), Tanizawa et al.
patent: 6601452 (2003-08-01), Murata et al.
patent: A-H01-261872 (1989-10-01), None
patent: A-H09-18016 (1997-01-01), None

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