Flash memory device and method of fabricating the same

Details Flash memory device and method of fabricating the same Flash memory device and method of fabricating the same

2006-12-29

2010-11-30

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S435000

Reexamination Certificate

active

07842569

ABSTRACT:
One embodiment of a method of fabricating a flash memory device includes forming a trench mask pattern, which includes a gate insulation pattern and a charge storage pattern stacked in sequence, on a semiconductor substrate; etching the semiconductor substrate using the trench mask pattern as an etch mask to form trenches defining active regions; and sequentially forming lower and upper device isolation patterns in the trench. After sequentially forming an intergate insulation film and a control gate film on the upper device isolation pattern, the control gate film, the intergate insulation pattern and the gloating gate pattern are formed, thereby providing gate lines crossing over the active regions.

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