Fin structure formation

Details Fin structure formation Fin structure formation

2007-09-04

2007-09-04

Vinh, Lan (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S153000, C438S154000, C438S396000, C438S584000, C257S350000, C257S351000, C257S401000, C257S284000, C257S413000

Reexamination Certificate

active

11338464

ABSTRACT:
A method for forming fin structures is provided. Sacrificial structures are provided on a substrate. Fin structures are formed on the sides of the sacrificial structures. The forming of the fin structures comprises a plurality of cycles, wherein each cycle comprises a fin deposition phase and a fin profile shaping phase. The sacrificial structure is removed.

REFERENCES:
patent: 5716884 (1998-02-01), Hsue et al.
patent: 2001/0034114 (2001-10-01), Liaw
patent: 2006/0022262 (2006-02-01), Yoon et al.

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