Fabrication methods of a ZnO thin film structure and a ZnO...

Details Fabrication methods of a ZnO thin film structure and a ZnO... Fabrication methods of a ZnO thin film structure and a ZnO...

2011-04-05

2011-04-05

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S104000, C257S043000, C257S613000, C257S614000, C257SE29273, C257SE29296

Reexamination Certificate

active

07919365

ABSTRACT:
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

REFERENCES:
patent: 2003/0218222 (2003-11-01), Wager et al.
patent: 2005/0275038 (2005-12-01), Shih et al.
patent: 2006/0220023 (2006-10-01), Hoffman et al.

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