Method and system for depositing a thin-film transistor

Details Method and system for depositing a thin-film transistor Method and system for depositing a thin-film transistor

2011-07-12

2011-07-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C204S192230, C118S7230IR

Reexamination Certificate

active

07977255

ABSTRACT:
A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate processing temperature of between 50 and 350° C.; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate by sputtering a target assembly at a medium frequency.

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EP Search Report, EP 10 17 6247 dated Jan. 17, 2011.

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