Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-04-11
2010-06-22
Alanko, Anita K (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S634000, C438S637000, C438S704000, C438S715000, C438S740000, C438S745000, C216S057000, C216S072000
Reexamination Certificate
active
07741222
ABSTRACT:
An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.
REFERENCES:
patent: 5337207 (1994-08-01), Jones et al.
patent: 5698468 (1997-12-01), Kapoor
patent: 5783483 (1998-07-01), Gardner
patent: 6500763 (2002-12-01), Kim et al.
patent: 6660580 (2003-12-01), Lee
patent: 6667209 (2003-12-01), Won et al.
patent: 6815221 (2004-11-01), Kim et al.
patent: 6828229 (2004-12-01), Lee et al.
patent: 6897106 (2005-05-01), Park et al.
patent: 7425512 (2008-09-01), Udayakumar et al.
patent: 7494940 (2009-02-01), Doh et al.
patent: 2003/0054605 (2003-03-01), Kim et al.
patent: 2003/0136996 (2003-07-01), Park
patent: 2006/0076579 (2006-04-01), Thean et al.
patent: 10257669 (2003-07-01), None
patent: 1394848 (2004-03-01), None
patent: 2001-237400 (2001-08-01), None
patent: 2008283202 (2008-11-01), None
patent: 1020050073211 (2005-07-01), None
Hyung Yong-Woo
Im Ki-Vin
Jang Won-Jun
Lee Hyeon-Deok
Lim Hun-Young
Alanko Anita K
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
LandOfFree
Etch stop structure and method of manufacture, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etch stop structure and method of manufacture, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etch stop structure and method of manufacture, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4173327