Etch stop structure and method of manufacture, and...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S634000, C438S637000, C438S704000, C438S715000, C438S740000, C438S745000, C216S057000, C216S072000

Reexamination Certificate

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07741222

ABSTRACT:
An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.

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