Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-10-21
2000-09-26
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 71, 156345, H05H 100
Patent
active
061238643
ABSTRACT:
A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.
REFERENCES:
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Chang Mei
Morrison Alan
Sherstinsky Semyon
Sinha Ashok
Tam Simon W.
Applied Materials Inc.
Dang Thi
Morris Birgit E.
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