Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-08-29
2006-08-29
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185250
Reexamination Certificate
active
07099212
ABSTRACT:
A ROM embedded DRAM provides ROM cells that can be programmed to a single state. The ROM cells include capacitors having a storage node. The storage node is processed to have a substantially high substrate leakage. The ROM cells, therefore, are hard programmed to a logic zero state. Bias techniques can be used to read un-programmed ROM cells accurately. As described, sense amplifier circuitry can be offset in one embodiment to default to the un-programmed state. In another embodiment, bias circuitry is coupled to bit lines to favor the un-programmed state. A differential pre-charge operation can also be used in another embodiment.
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Derner Scott
Kurth Casey
Wald Phillip G.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Nguyen Tuan T.
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