Eliminate bridging between gate and source/drain in cobalt...

Details Eliminate bridging between gate and source/drain in cobalt... Eliminate bridging between gate and source/drain in cobalt...

2005-03-08

2005-03-08

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S221000, C438S229000, C257S336000

Reexamination Certificate

active

06864143

ABSTRACT:
A new method is provided for the formation of salicided layers for a gate electrode structure. A gate electrode structure is formed, a first layer of gate spacers containing oxide is formed on the sidewalls of the gate structure. A second layer of gate spacers is deposited over the first layer of gate spacer, this second layer of gate spacer contains SiNx. A layer of cobalt is deposited over the gate electrode thereby including the gate spacers. The layer of cobalt is salicided forming reacted and unreacted layers of cobalt whereby the reacted layers of cobalt form CoSixon the surface of the gate electrode and the source/drain regions. The unreacted cobalt and the second gate spacer layer of SiNxare simultaneously removed from the sidewalls of the gate electrode leaving reacted layers of CoSixin place over the surface of the gate structure and the surface of the source/drain regions. The process of removal of the unreacted cobalt combined with the removal of the layer of SiNxfrom the sidewalls of the gate electrode removes any possibility of electrical shorts between the points of contact of the gate electrode structure.

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K. Inoue et al. “A new cobalt salicide technology for CMOS devices” IEEE transactions of electron devices vol. 45 No. 11, Nov. 1998, p. 2312-2318.

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