Elevated source drain disposable spacer CMOS

Details Elevated source drain disposable spacer CMOS Elevated source drain disposable spacer CMOS

2006-07-11

2006-07-11

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S586000, C438S924000

Reexamination Certificate

active

07074684

ABSTRACT:
In one embodiment of the invention, source and drain regions are formed as well as source and drain contact regions. Thereafter source and drain extension regions are formed. In another embodiment, elevated source and drain regions are formed as well as source and drain extension regions. Thereafter source and drain contact regions are formed at a temperature up to about 600° C. and an annealing time of up to about one minute.

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