Electrostactic discharge protection structure for lightly doped

Details Electrostactic discharge protection structure for lightly doped Electrostactic discharge protection structure for lightly doped

1996-05-28

1997-09-02

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438202, 438305, 438307, H01L 218238

Patent

active

056630824

ABSTRACT:
An electrostatic discharge protection device structure having a lightly doped drain area at the source to allow a faster time to start conduction in an electrostatic discharge event and an abrupt junction at the drain to allow for a low voltage during the conduction of an electrostatic discharge event. The electrostatic discharge protection device structure will be fabricated using standard lightly doped drain CMOS processing.

REFERENCES:
patent: 5142345 (1992-08-01), Miyata
patent: 5246872 (1993-09-01), Mortensen
patent: 5516717 (1996-05-01), Hsu

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