Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-16
2007-01-16
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S599000, C438S618000, C438S637000, C438S638000, C438S666000, C438S672000, C438S700000, C438S702000, C438S200000, C438S627000, C438S639000, C438S687000, C438S121000, C438S620000, C257SE21660
Reexamination Certificate
active
10694500
ABSTRACT:
An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.
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Agarwala Birendra N.
Dalal Hormazdyar Minocher
Engel Brett H.
Liniger Eric G.
Llera-Hurlburt Diana
Ahmadi Mohsen
Blecker Ira D.
Lebentritt Michael
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