Dual spacer process for non-volatile memory devices

Details Dual spacer process for non-volatile memory devices Dual spacer process for non-volatile memory devices

2006-03-14

2006-03-14

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S275000, C438S303000, C438S537000, C438S595000

Reexamination Certificate

active

07012008

ABSTRACT:
In a two-step spacer fabrication process for a non-volatile memory device, a thin oxide layer is deposited on a wafer substrate leaving a gap in the core of the non-volatile memory device. Implantation and/or oxide-nitride-oxide removal can be accomplished through this gap. After implantation, a second spacer is deposited. After the second spacer deposition, a periphery spacer etch is performed. By the above method, a spacer is formed.

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