Dual source gas methods for forming integrated circuit capacitor

Details Dual source gas methods for forming integrated circuit capacitor Dual source gas methods for forming integrated circuit capacitor

1997-01-02

1998-12-29

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

058540954

ABSTRACT:
A silicon layer is formed on an integrated circuit substrate using silane and disilane thereby increasing a step coverage for the silicon layer, increasing a deposition rate for the silicon layer, reducing variability of the deposition rate, and reducing local crystallization of the silicon layer. More particularly, the step of forming the silicon layer can include forming a first silicon sublayer on the substrate using a first source gas including silane, and forming a second silicon sublayer on the first silicon sublayer using a second source gas different from the first source gas wherein the second source gas includes disilane. Alternately, the step of forming the silicon layer can include forming the silicon layer on the integrated circuit substrate using a source gas including a mixture of silane and disilane.

REFERENCES:
patent: 4910043 (1990-03-01), Freeman et al.
patent: 5234862 (1993-08-01), Aketagawa et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5382540 (1995-01-01), Sharma et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5393373 (1995-02-01), Jun et al.
patent: 5394012 (1995-02-01), Kimura
patent: 5405801 (1995-04-01), Han et al.
patent: 5464791 (1995-11-01), Hirota
patent: 5486488 (1996-01-01), Kamiyama
patent: 5543347 (1996-08-01), Kawano et al.
patent: 5554557 (1996-09-01), Koh
patent: 5567637 (1996-10-01), Hirota
patent: 5590051 (1996-12-01), Yokozawa
patent: 5595937 (1997-01-01), Mikagi
patent: 5597754 (1997-01-01), Lou et al.
patent: 5616511 (1997-04-01), Hirota
patent: 5618747 (1997-04-01), Lou
patent: 5623243 (1997-04-01), Watanabe et al.
H. Watanabe et al., A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs, 1992 IEEE, IEDM 92, Apr. 1992, 10.1.1-10.1.4. pp. 259-262.
H. Watanabe et al., A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb DRAMs, IETM 92-259, pp. 10.1.1-10.1.4, 1992 IEEE. no month.
Voutsas et al., Structure of As-Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures, J.Electrochem.Soc., vol. 139, No. 9, Sep. 1992, pp. 2659-2665.

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