Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-07
1999-08-31
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257331, H01L 2972
Patent
active
059457074
ABSTRACT:
A memory cell having a grooved gate formed in a sub-lithographic groove, and methods of making thereof are disclosed. The groove extends the channel length to include the groove sidewalls and width of the groove. Sidewall sections of the channel located along the gate sidewalls have a larger length than the bottom channel section length located along the gate bottom width. Thus, the memory device is primarily controlled by the sidewall channel sections, instead of the bottom channel section. The groove may be a stepped groove formed by a two step etch to further increase the channel length and may be formed centered along the gate conductor width.
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Bronner Gary B.
Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
International Business Machines - Corporation
Shkurko Eugene I.
Wojciechowicz Edward
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