Memory device

Details Memory device Memory device

1998-02-25

1999-08-31

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, H01L 29788

Patent

active

059457066

ABSTRACT:
A memory device and method of forming the same, includes a plurality of wordlines for applying a cell driving signal, a plurality of bitlines for inputting or outputting data, and a plurality of cells, each cell having a first gate, source and drain electrodes and a second gate, wherein either the first or second gate is connected to one of the wordlines, the source electrode is connected to one of the bitlines, and the drain electrode is connected to either the first or second gate which is not connected to the one wordline.

REFERENCES:
patent: 4872042 (1989-10-01), Maeda et al.
patent: 5220530 (1993-06-01), Itoh
patent: 5355330 (1994-10-01), Hisamoto et al.
patent: 5463234 (1995-10-01), Toriumi et al.
A Capacitorless DRAM Cell on SOI Substrate, Hsing-jen Wann and Chenming Hu, Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA 94720, pp. 26.4.1 to 26.4.4.

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