Double-gate FETs (Field Effect Transistors)

Details Double-gate FETs (Field Effect Transistors) Double-gate FETs (Field Effect Transistors)

2007-07-31

2007-07-31

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S176000

Reexamination Certificate

active

10905979

ABSTRACT:
A method for forming transistors with mutually-aligned double gates. The method includes the steps of (a) providing a wrap-around-gate transistor structure, wherein the wrap-around-gate transistor structure includes (i) semiconductor region, and (ii) a gate electrode region wrapping around the semiconductor region, wherein the gate electrode region is electrically insulated from the semiconductor region by a gate dielectric film; and (b) removing first and second portions of the wrap-around-gate transistor structure so as to form top and bottom gate electrodes from the gate electrode region, wherein the top and bottom gate electrodes are electrically disconnected from each other.

REFERENCES:
patent: 4097986 (1978-07-01), Henry et al.
patent: 5349228 (1994-09-01), Neudeck et al.
patent: 5482877 (1996-01-01), Rhee
patent: 5580802 (1996-12-01), Mayer et al.
patent: 5612563 (1997-03-01), Fitch et al.
patent: 5646058 (1997-07-01), Taur et al.
patent: 5677550 (1997-10-01), Lee
patent: 5773331 (1998-06-01), Solomon et al.
patent: 5780327 (1998-07-01), Chu et al.
patent: 6316296 (2001-11-01), Sakamoto
patent: 6423599 (2002-07-01), Yu
patent: 6611023 (2003-08-01), En et al.
patent: 7005330 (2006-02-01), Yeo et al.

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