Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-01-04
2011-01-04
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S231000, C438S239000, C438S285000, C438S299000, C257SE21438
Reexamination Certificate
active
07863123
ABSTRACT:
A low resistance contact is formed to a metal gate or a transistor including a High-κ gate dielectric in a high integration density integrated circuit by applying a liner over a gate stack, applying a fill material between the gate stacks, planarizing the fill material to support high-resolution lithography, etching the fill material and the liner selectively to each other to form vias and filling the vias with a metal, metal alloy or conductive metal compound such as titanium nitride.
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International Application No. PCT/EP2010/050295 Filing Date: Dec. 1, 2010 International Searching Authority—ISR and Written Opinion.
Bu Huiming
Chudzik Michael P.
Donaton Ricardo A.
Moumen Naim
Yan Hongwen
Abate Joseph P.
International Business Machines - Corporation
Lee Kyoung
Richards N Drew
Whitman Curtis Christofferson & Cook, P.C.
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