Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2007-09-28
2010-11-02
Cleveland, Michael (Department: 1712)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S097100, C427S126300, C438S640000, C438S656000, C438S685000, C257S751000, C257S763000
Reexamination Certificate
active
07824743
ABSTRACT:
Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.
REFERENCES:
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 5834372 (1998-11-01), Lee et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5923056 (1999-07-01), Lee et al.
patent: 5976327 (1999-11-01), Tanaka
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6084302 (2000-07-01), Sandhu
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6284646 (2001-09-01), Leem et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6294836 (2001-09-01), Paranjpe et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6348376 (2002-02-01), Lim et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6365502 (2002-04-01), Paranjpe et al.
patent: 6372598 (2002-04-01), Kang et al.
patent: 6379748 (2002-04-01), Bhandari et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6410986 (2002-06-01), Merchant et al.
patent: 6416577 (2002-07-01), Suntoloa et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6444263 (2002-09-01), Paranjpe et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6482262 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6511539 (2003-01-01), Raaijmakers et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6562715 (2003-05-01), Chen et al.
patent: 6569501 (2003-05-01), Chiang et al.
patent: 6585823 (2003-07-01), Van Wijck et al.
patent: 6593484 (2003-07-01), Yasuhara et al.
patent: 6596602 (2003-07-01), Iizuka et al.
patent: 6599572 (2003-07-01), Saanila et al.
patent: 6607976 (2003-08-01), Chen et al.
patent: 6620723 (2003-09-01), Byun et al.
patent: 6627995 (2003-09-01), Paranjpe et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6632279 (2003-10-01), Ritala et al.
patent: 6645847 (2003-11-01), Paranjpe et al.
patent: 6660622 (2003-12-01), Chen et al.
patent: 6718126 (2004-04-01), Lei
patent: 6740585 (2004-05-01), Yoon et al.
patent: 6772072 (2004-08-01), Ganguli et al.
patent: 6773507 (2004-08-01), Jallepally et al.
patent: 6777352 (2004-08-01), Tepman et al.
patent: 6784096 (2004-08-01), Chen et al.
patent: 6790773 (2004-09-01), Drewery et al.
patent: 6800173 (2004-10-01), Chiang et al.
patent: 6803272 (2004-10-01), Halliyal et al.
patent: 6812126 (2004-11-01), Paranjpe et al.
patent: 6815285 (2004-11-01), Choi et al.
patent: 6821563 (2004-11-01), Yudovsky
patent: 6831004 (2004-12-01), Byun et al.
patent: 6838125 (2005-01-01), Chung et al.
patent: 6846516 (2005-01-01), Yang et al.
patent: 6861356 (2005-03-01), Matsuse et al.
patent: 6875271 (2005-04-01), Glenn et al.
patent: 6893915 (2005-05-01), Park et al.
patent: 6905541 (2005-06-01), Chen et al.
patent: 6905737 (2005-06-01), Verplancken et al.
patent: 6915592 (2005-07-01), Guenther
patent: 6916398 (2005-07-01), Chen et al.
patent: 6936906 (2005-08-01), Chung et al.
patent: 6939801 (2005-09-01), Chung et al.
patent: 6951804 (2005-10-01), Seutter et al.
patent: 6953742 (2005-10-01), Chen et al.
patent: 6955211 (2005-10-01), Ku et al.
patent: 6972267 (2005-12-01), Cao et al.
patent: 6974771 (2005-12-01), Chen et al.
patent: 6998014 (2006-02-01), Chen et al.
patent: 7005697 (2006-02-01), Batra et al.
patent: 7026238 (2006-04-01), Xi et al.
patent: 7041335 (2006-05-01), Chung
patent: 7049226 (2006-05-01), Chung et al.
patent: 7067422 (2006-06-01), Nakamura et al.
patent: 7081271 (2006-07-01), Chung et al.
patent: 7081409 (2006-07-01), Kang et al.
patent: 7094680 (2006-08-01), Seutter et al.
patent: 7098131 (2006-08-01), Kang et al.
patent: 7186385 (2007-03-01), Ganguli et al.
patent: 7204886 (2007-04-01), Chen et al.
patent: 7208413 (2007-04-01), Byun et al.
patent: 7211508 (2007-05-01), Chung et al.
patent: 7408225 (2008-08-01), Shinriki et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0025979 (2001-10-01), Kim et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0054730 (2001-12-01), Kim et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0000598 (2002-01-01), Kang et al.
patent: 2002/0007790 (2002-01-01), Park
patent: 2002/0009544 (2002-01-01), McFeely et al.
patent: 2002/0020869 (2002-02-01), Park et al.
patent: 2002/0021544 (2002-02-01), Cho et al.
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0048635 (2002-04-01), Kim et al.
patent: 2002/0052097 (2002-05-01), Park
patent: 2002/0060363 (2002-05-01), Xi et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0073924 (2002-06-01), Chiang et al.
patent: 2002/0076481 (2002-06-01), Chiang et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0076508 (2002-06-01), Chiang et al.
patent: 2002/0076837 (2002-06-01), Hujanen et al.
patent: 2002/0086111 (2002-07-01), Byun et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0094689 (2002-07-01), Park
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0104481 (2002-08-01), Chiang et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2002/0115886 (2002-08-01), Yasuhara et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0144655 (2002-10-01), Chiang et al.
patent: 2002/0144657 (2002-10-01), Chiang et al.
patent: 2002/0146511 (2002-10-01), Chiang et al.
patent: 2002/0155722 (2002-10-01), Satta et al.
patent: 2002/0162506 (2002-11-01), Sneh et al.
patent: 2002/0164421 (2002-11-01), Chiang et al.
patent: 2002/0164423 (2002-11-01), Chiang et al.
patent: 2002/0177282 (2002-11-01), Song
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2002/0187256 (2002-12-01), Elers et al.
patent: 2002/0197402 (2002-12-01), Chiang et al.
patent: 2002/0197856 (2002-12-01), Matsuse et al.
patent: 2003/0013320 (2003-01-01), Kim et al.
patent: 2003/0017697 (2003-01-01), Choi et al.
patent: 2003/0022487 (2003-01-01), Yoon et al.
patent: 2003/0029715 (2003-02-01), Yu et al.
patent: 2003/0031807 (2003-02-01), Elers et al.
patent: 2003/0038369 (2003-02-01), Layadi et al.
patent: 2003/0042630 (2003-03-01), Babcoke et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0053799 (2003-03-01), Lei
patent: 2003/0057526 (2003-03-01), Chung et al.
patent: 2003/0057527 (2003-03-01), Chung et al.
patent: 2003/0059538 (2003-03-01), Chung et al.
patent: 2003/0072975 (2003-04-01), Shero et al.
patent: 2003/0079686 (2003-05-01), Chen et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0082301 (2003-05-01), Chen et al.
patent: 2003/0082307 (2003-05-01), Chung et al.
patent: 2003/0087520 (2003-05-01), Chen et al.
patent: 2003/008930
Guo Ted
Hassan Mohd Fadzli Anwar
Kim Ryeun Kwan
Lee Wei Ti
Park Hyung Chul
Applied Materials Inc.
Cleveland Michael
Jiang Lisha
Patterson & Sheridan LLP
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