Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-10
2006-10-10
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S790000, C438S789000
Reexamination Certificate
active
07119016
ABSTRACT:
A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXnwherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.
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Chakravarti Ashima B.
Dibello Gregory Wayne
Iyer Ramaseshan Suryanarayanan
Lee Woo-Hyeong
Madan Anita
Applied Materials Inc.
Cai Yuanmin
International Business Machines - Corporation
Schillinger Laura M.
Whitham Curtis Christofferson & Cook PC
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