Depletion to avoid cross contamination

Details Depletion to avoid cross contamination Depletion to avoid cross contamination

2005-02-22

2005-02-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S509000

Reexamination Certificate

active

06858503

ABSTRACT:
A fabrication system utilizes a protocol for removing germanium from a top surface of a wafer. An exposure to a gas, such as a gas containing the hydrochloric acid can remove germanium from the top surface. The protocol can allow shared equipment to be used in both Flash product fabrication lines and strained silicon (SMOS) fabrication lines. The protocol allows better silicidation in SMOS devices.

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