Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-07
2009-08-18
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21651
Reexamination Certificate
active
07575970
ABSTRACT:
Methods of forming a deep trench capacitor through an SOI substrate, and a capacitor are disclosed. In one embodiment, a method includes forming a trench opening into the SOI substrate to the silicon substrate; depositing a sidewall spacer in the trench opening; etching to form the deep trench into the silicon substrate; forming a first electrode by implanting a dopant into the silicon substrate, whereby the sidewall spacer protects the BOX layer and the silicon layer; removing the sidewall spacer; depositing a node dielectric within the deep trench; and forming a second electrode by depositing a conductor in the deep trench. Implanting creates a substantially uniform depth doped region except at a portion adjacent to a lowermost portion of the deep trench, which may be substantially bulbous. The BOX layer is protected from undercutting by the sidewall spacer, and the implantation removes the need for out-diffusing dopant from silica glass.
REFERENCES:
patent: 6297088 (2001-10-01), King
patent: 6355518 (2002-03-01), Wu et al.
patent: WO2006055357 (2006-05-01), None
Cheng Kangguo
Ho Herbert L.
Otani Yoichi
Winstel Kevin R.
C. Li Todd M.
Chaudhari Chandra
Hoffman Warnick LLC
International Business Machines - Corporation
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