4. Semiconductor device manufacturing: process
  5. Making field effect device having pair of active regions...
  6. Having insulated gate

Herbert L. Ho

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Backside buried strap for SOI DRAM trench capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Buried strap formation in a DRAM trench capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Buried-strap formation in a dram trench capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent

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Collarless trench DRAM device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Controlled recrystallization of buried strap in a semiconductor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Profile ID: LFUS-PAI-P-400635

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