Decreasing metal-silicide oxidation during wafer queue time

Details Decreasing metal-silicide oxidation during wafer queue time Decreasing metal-silicide oxidation during wafer queue time

2007-01-09

2007-01-09

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S649000, C438S682000, C257S754000, C257S757000

Reexamination Certificate

active

10905517

ABSTRACT:
Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen
itrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.

REFERENCES:
patent: 6287966 (2001-09-01), Lui et al.
patent: 6586331 (2003-07-01), Lui et al.
patent: 6916699 (2005-07-01), Agarwal

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