Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-03-08
2005-03-08
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S636000
Reexamination Certificate
active
06864556
ABSTRACT:
A bottom anti-reflective coating comprising an organic polymer layer having substantially no nitrogen and a low compressive stress in relation to a polysilicon layer is employed as the lower layer of a bi-layer antireflective coating/hardmask structure to reduce deformation of a pattern to be formed in a patternable layer. The organic polymer layer is substantially transparent to visible radiation, enabling better detection of alignment marks during a semiconductor device fabrication process and improving overlay accuracy. The organic polymer layer provides excellent step coverage and may be advantageously used in the fabrication of structures such as FinFETs.
REFERENCES:
patent: 6057239 (2000-05-01), Wang et al.
patent: 6171940 (2001-01-01), Huang
patent: 20020086547 (2002-07-01), Mui et al.
patent: 20040018739 (2004-01-01), Abooameri et al.
Bell Scott A.
Chang Mark S.
Huang Richard J.
Lyons Christopher F.
Plat Marina V.
Dolan Jennifer M
Foley & Lardner LLP
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