CVD of silicon oxide using TEOS decomposition and in-situ planar

Details CVD of silicon oxide using TEOS decomposition and in-situ planar CVD of silicon oxide using TEOS decomposition and in-situ planar

1988-10-26

1989-10-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 501, 118620, 118728, 156646, 156653, 156657, 156345, 20419212, 20419237, 204298, 427 38, 4272481, 427294, B44C 122, C03C 1500, C03C 2506

Patent

active

048729477

ABSTRACT:
A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either along or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

REFERENCES:
patent: 3934060 (1976-01-01), Burt et al.
patent: 4717596 (1988-01-01), Barbee et al.
Kirov et al., "Investigation of SiO.sub.2 Layers Deposited by Plasma Decomposition of Tetra-Ethoxy Silane in a Planar Reactor", Phys. Stat. Sol (a) 48, (1978), pp. 609-614.
Mukherjee et al., "The Deposition of Thin Films by the Decomposition of Tetra-Ethoxy Silane in a Radio Frequency Glow Discharge", Thin Solid Films, 14 (1972), pp. 105-118.
Woodward et al., "The Deposition of Insulators onto InP Using Plasma-Enhanced Chemical Vapour Deposition", Thin Solid Films, 85 (1981), pp. 61-69.
Mackens et al., "Plasma-Enhanced Chemically Vapour-Deposited Silicon Dioxide for Metal Oxide Semiconductor Structures on InSb", Thin Solid Films, 97 (1982), pp. 53-61.
Secrist et al., "Deposition of Silica Films by the Glow Discharge Technique", Journal of the Electrochemical Society, vol. 113, No. 9, Sep. 1986, pp. 914-920.

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