Contaminant reduction improvements for plasma etch chambers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

216 59, 216 63, 216 67, 216 71, 20419232, 20419233, 427569, H01L 21306, C23C 1434, H05H 124

Patent

active

056931794

ABSTRACT:
A plasma etch chamber includes a modified focus ring which is used in conjunction with chamber pressure throttling to eject contaminants in the focus ring away from the substrate just before the etching cycle is completed. Additionally, process gas is directed against the inner wall of the chamber to create a swirling flow of plasma within the chamber and thus disturb any contaminant-generating field adjacent the chamber wall. A process gas, or a non-reactive purge gas, may also be supplied from a diffuser atop the cathode, to direct a gas layer along the top and sides of the chamber to reduce contaminant build-up on the chamber surfaces.

REFERENCES:
patent: 3608519 (1971-09-01), Richardson et al.
patent: 4245154 (1981-01-01), Uehara et al.
patent: 4252595 (1981-02-01), Yamamoto
patent: 4282077 (1981-08-01), Reavill
patent: 4298443 (1981-11-01), Maydan
patent: 4345968 (1982-08-01), Coe
patent: 4358686 (1982-11-01), Kinoshita
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 4563367 (1986-01-01), Sherman
patent: 4612432 (1986-09-01), Sharp-Giesler
patent: 4632719 (1986-12-01), Chow et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4842683 (1989-06-01), Cheng et al.
patent: 4960610 (1990-10-01), Krogh
patent: 5049251 (1991-09-01), Inoue
patent: 5221425 (1993-06-01), Blanchard et al.
patent: 5458725 (1995-10-01), Granger et al.
Francis, Terry "Controlling process equipment contamination in the '90's," Semiconductor International, Oct. 1993 62:62-66.
T. Yasuo, "Dry Etching of A1-Si-Cu Alloy," vol. 13, No. 396, (E-815), 4 Sep. 1989 & JP -A-01 140 725 (Matsushita Electric Ind. Co. Ltd.) 1 Jun. 1989 abstract.
F. Yasuhiro, "Plasma Etching Device," vol. 12, No. 111, (E-598), 8 Apr. 1988 & JP-A-62 241 336 (NEC KYUSHU Ltd.) 22 Oct. 1987 abstract.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Contaminant reduction improvements for plasma etch chambers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contaminant reduction improvements for plasma etch chambers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contaminant reduction improvements for plasma etch chambers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-798142

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.