Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S774000, C257S790000
Reexamination Certificate
active
07898037
ABSTRACT:
A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a contact extending from a top surface of the first ILD into the first ILD; a second ILD over the first ILD; a bottom inter-metal dielectric (IMD) over the second ILD; and a dual damascene structure comprising a metal line in the IMD and a via in the second ILD, wherein the via is connected to the contact.
REFERENCES:
patent: 4783692 (1988-11-01), Uratani
patent: 6770516 (2004-08-01), Wu et al.
patent: 6844238 (2005-01-01), Yeo et al.
patent: 6924560 (2005-08-01), Wang et al.
patent: 7005330 (2006-02-01), Yeo et al.
patent: 7013447 (2006-03-01), Mathew et al.
patent: 7074656 (2006-07-01), Yeo et al.
patent: 7224068 (2007-05-01), Tseng et al.
patent: 7462538 (2008-12-01), Li et al.
patent: 2003/0145299 (2003-07-01), Fried et al.
patent: 2004/0119100 (2004-06-01), Nowak et al.
patent: 2005/0023633 (2005-02-01), Yeo et al.
patent: 2005/0111247 (2005-05-01), Takaura et al.
patent: 2005/0136582 (2005-06-01), Aller et al.
patent: 2005/0139893 (2005-06-01), Hofmann et al.
patent: 2005/0140029 (2005-06-01), Li et al.
patent: 2005/0224986 (2005-10-01), Tseng et al.
patent: 2006/0138552 (2006-06-01), Brask et al.
patent: 2006/0157737 (2006-07-01), Lim et al.
patent: 2007/0026629 (2007-02-01), Chen et al.
patent: 2007/0093029 (2007-04-01), Dao
patent: 2007/0207590 (2007-09-01), Kiyotoshi et al.
patent: 2008/0258228 (2008-10-01), Chuang et al.
patent: 2008/0296691 (2008-12-01), Chuang et al.
Cheng Chung Long
Chuang Harry
Chung Sheng-Chen
Kao Jung-Hui
Liang Mong Song
Haynes and Boone LLP
Louie Wai-Sing
Taiwan Semiconductor Manufacturing Company , Ltd.
Tang Sue
LandOfFree
Contact scheme for MOSFETs does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contact scheme for MOSFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact scheme for MOSFETs will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2702527