Compensation techniques for substrate heating processes

Details Compensation techniques for substrate heating processes Compensation techniques for substrate heating processes

2011-03-15

2011-03-15

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S378000, C438S390000, C438S795000, C257SE21284, C257SE21324, C257SE21497

Reexamination Certificate

active

07906402

ABSTRACT:
Methods for compensating for a thermal profile in a substrate heating process are provided herein. In some embodiments, a method of processing a substrate includes determining an initial thermal profile of a substrate that would result from subjecting the substrate to a process; determining a compensatory thermal profile based upon the initial thermal profile and a desired thermal profile; imposing the compensatory thermal profile on the substrate prior to performing the process on the substrate; and performing the process to create the desired thermal profile on the substrate. The initial substrate thermal profile can also be compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. Heat provided by an edge ring to the substrate may be controlled prior to or during the substrate heating process.

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