Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-17
2011-05-17
Parker, Kenneth A (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S267000, C438S277000, C257S369000, C257SE21421, C257SE21623
Reexamination Certificate
active
07943453
ABSTRACT:
A semiconductor structure and a method of forming the same. The semiconductor structure includes a semiconductor substrate, a gate dielectric layer on top of the semiconductor substrate. The structure also includes a first metal containing region on top of the gate dielectric layer. The structure also includes a second metal containing region on top of the gate dielectric layer wherein the first and second metal containing regions are in direct physical contact with each other. The structure further includes a gate electrode layer on top of both the first and second metal containing regions and the gate electrode layer is in direct physical contact with both the first and second metal containing regions. The structure further includes a patterned photoresist layer on top of the gate electrode layer.
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Kastenmeier Bernd Ernst Eduard
Lee Byoung Hun
Moumen Naim
Standaert Theodorus Eduardus
Canale Anthony J.
Diaz José R
International Business Machines - Corporation
Parker Kenneth A
Schmeiser Olsen & Watts
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