Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-03-11
2010-12-07
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S204000, C365S205000
Reexamination Certificate
active
07848166
ABSTRACT:
A circuit and method for a sense amplifier for sensing the charge stored by a memory cell is disclosed. The memory cell is coupled to a bit line, a complementary bit line and a differential sense amplifier is coupled to the bit line and the complementary bit line. A control signal couples a reference voltage to the complementary bit line. A positive precharge voltage is applied to the bit line and complementary bit line prior to the sense amplifier being enabled. The memory cell outputs a voltage to the bit line responsive to a word line, and the sense amplifier senses the differential voltage between the bit line and the complementary bit line responsive to a sense enable signal. A voltage regulator for generating the reference voltage, preferably about 80% of a positive supply voltage, is disclosed. A method of sensing data stored by a memory cell is disclosed.
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Hsu Kuoyuan (Peter)
Huang Ming Chieh
Kim Young Suk
Wang Bing
Ho Hoai V
Norman James G.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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