4. Static information storage and retrieval
  5. Read/write circuit
  6. Precharge

Kuoyuan (Peter) Hsu

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Circuit and method for a Vdd level memory sense amplifier

Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate

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Controlling global bit line pre-charge time for high speed...

Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate

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No-disturb bit line write for improving speed of eDRAM

Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2277122

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