Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-06-06
2006-06-06
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257S720000, C257S796000
Reexamination Certificate
active
07057277
ABSTRACT:
A chip package structure is disclosed. The chip package structure essentially comprises a carrier, one or more chips, a heat sink and an encapsulating material layer. At least one of the chips is bonded and electrically connected to the carrier or another chip using a flip-chip bonding technique. A flip-chip bonding gap is set up between the chip and he carrier or other chips. The heat sink is set up over the top chip. The heat sink has an area bigger than the chip. The encapsulating material layer fills up the flip-chip bonding gap and covers the carrier as well as the heat sink. The encapsulating material layer is formed in a simultaneous molding process and has a thermal conductivity more than 1.2 W/m.K. Furthermore, a plurality of standoff components may be selectively positioned on the heat sink.
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Chen Kai-Chi
Fukui Taro
Huang Shu-Chen
Lee Tzong-Ming
Li Hsun-Tien
Industrial Technology Research Institute
Jiang Chyun IP Office
Matsushita Electric & Works Ltd.
Thai Luan
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