Coating apparatus – Gas or vapor deposition – Work support
Patent
1994-02-23
1997-12-09
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Work support
118728, 118725, 118500, C23C 1600
Patent
active
056955685
ABSTRACT:
An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
REFERENCES:
patent: 4061800 (1977-12-01), Anderson
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585920 (1986-04-01), Hoog et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4883560 (1989-11-01), Ishihara
patent: 4892753 (1990-01-01), Wang et al.
patent: 4981103 (1991-01-01), Sekiguchi
patent: 4997677 (1991-03-01), Wang
patent: 5148714 (1992-09-01), McDiarmid
patent: 5198034 (1993-03-01), deBoer et al.
patent: 5228501 (1993-07-01), Tepman et al.
patent: 5230741 (1993-07-01), van de Ven
patent: 5231690 (1993-07-01), Soma et al.
patent: 5238499 (1993-08-01), van de Ven et al.
patent: 5324553 (1994-06-01), Ovshinsky
patent: 5343938 (1994-09-01), Schmidt
patent: 5374315 (1994-12-01), deBoer
patent: 5421893 (1995-06-01), Perlov
patent: 5443648 (1995-08-01), Ohkase
patent: 5476548 (1995-12-01), Lei
patent: 5492566 (1996-02-01), Sumnitsch
patent: 5516367 (1996-05-01), Lei
patent: 5525160 (1996-06-01), Tanaka
patent: 5556476 (1996-09-01), Lei et al.
Chang Mei
Lei Lawrence Chung-Lai
Littau Karl
Morrison Alan
Perlov Ilya
Applied Materials Inc.
Bueker Richard
Lund Jeffrie R.
LandOfFree
Chemical vapor deposition chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical vapor deposition chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition chamber will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1604266