Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-04-29
2008-04-29
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S642000
Reexamination Certificate
active
07365026
ABSTRACT:
A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CxHyon the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably C2H4or (CH3)2CHC6H6CH3, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.
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Bao Tien-I
Jeng Shwang-Ming
Lin Keng-Chu
Yeh Ming Ling
Lee Calvin
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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