Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-04-12
2011-04-12
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S737000, C257S673000, C257S761000, C257S762000, C257S763000, C257S780000, C257S779000, C257S764000, C257SE21508, C257SE21509, C257SE21592
Reexamination Certificate
active
07923836
ABSTRACT:
A microelectronic element and a related method for fabricating such is provided. The microelectronic element comprises a contact pad overlying a major surface of a substrate. The contact pad has a composition including copper at a contact surface. A passivation layer is also provided overlying the major surface of the substrate. The passivation layer overlies the contact pad such that it exposes at least a portion of the contact surface. A plurality of metal layers arranged in a stack overlie the contact surface and at least a portion of the passivation layer. The stack includes multiple layers, which can have different thicknesses and different metals, with the lowest layer including titanium (Ti) and nickel (Ni) in contact with the contact surface.
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Cheng Tien-Jen
Farooq Mukta G.
Quon Roger A.
Armand Marc
Brown Katherine S.
Fahmy Wael M
International Business Machines - Corporation
Jaklitsch Lisa U.
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