Bipolar electrostatic chuck and method of making same

Details Bipolar electrostatic chuck and method of making same Bipolar electrostatic chuck and method of making same

1997-07-11

2000-07-11

Saadat, Mahshid

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

361699, 361704, 361707, 361715, 257714, H01G 300, H01N 300, H01T 2300

Patent

active

060882131

ABSTRACT:
Apparatus for retaining a semiconductor wafer in a semiconductor wafer processing system. The apparatus comprises a support pedestal for supporting the wafer, first and second coplanar electrodes in the support pedestal for creating a chucking force, a cathode electrode for establishing wafer processing conditions and a third gap fill electrode positioned vertically between the first and second electrodes, such that the gap fill electrode is radially coincident with the gap between the first and second electrodes. A method of making the wafer retaining apparatus may comprise the steps of depositing electrode layers over molten, drawn sapphire layers to form a unitary bipolar electrostatic chuck having a gap fill electrode spaced between a pair of bipolar chucking electrodes and an RF powered electrode and radially coincident with the gap between the bipolar chucking electrodes.

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