Base oxide engineering for high-K gate stacks

Details Base oxide engineering for high-K gate stacks Base oxide engineering for high-K gate stacks

2011-05-10

2011-05-10

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000

Reexamination Certificate

active

07939396

ABSTRACT:
A method of forming a semiconductor structure includes providing a semiconductor substrate, performing a hydrogen annealing to the semiconductor substrate, forming a base oxide layer after the step of hydrogen annealing, and forming a high-k dielectric layer on the base oxide layer.

REFERENCES:
patent: 6100120 (2000-08-01), Yu
patent: 6245311 (2001-06-01), Kobayashi et al.
patent: 2004/0089902 (2004-05-01), Hayakawa
patent: 2004/0108575 (2004-06-01), Ohmi et al.
patent: 2004/0266117 (2004-12-01), Hwang
patent: 2006/0138538 (2006-06-01), Ohmi et al.
patent: 2007/0049051 (2007-03-01), Ahn et al.
Hou, Y.T., et al., “High Performance Tantalum Carbide Metal Gate Stack for nMOSFET Application”, IEDM Tech. Dig., 4 pages (2005).
Chang, V.S., et al., “Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectric Deposited by Nano-Laminated Atomic Layer Deposition (NL-ALD)”, in press, ECS Transaction, vol. 1, 11 pages (2006).
Hsu, P.F., et al., “Advanced Dual Metal Gate MOSFETs with High-k Dielectric for CMOS Application”, VLSI Symp. Tech. Dig., 2 pages (2006).

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