Back end interconnect with a shaped interface

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000

Reexamination Certificate

active

07494915

ABSTRACT:
An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.

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patent: 6020643 (2000-02-01), Fukuzumi et al.
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patent: 6396141 (2002-05-01), Schueller et al.
patent: 6495470 (2002-12-01), Sadjadi et al.
patent: 6607977 (2003-08-01), Rozbicki et al.
patent: 7241696 (2007-07-01), Clevenger et al.
patent: 2004/0115928 (2004-06-01), Malhotra et al.
patent: 2000332143 (2000-11-01), None

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