Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-01-04
2011-01-04
Wilson, Allan R (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021
Reexamination Certificate
active
07863742
ABSTRACT:
An integrated circuit structure includes a passivation layer; a via opening in the passivation layer; a copper-containing via in the via opening; a polymer layer over the passivation layer, wherein the polymer layer comprises an aperture, and wherein the copper-containing via is exposed through the aperture; a post-passivation interconnect (PPI) line over the polymer layer, wherein the PPI line extends into the aperture and physically contacts the copper-via opening; and an under-bump metallurgy (UBM) over and electrically connected to the PPI line.
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Chen Shih-Ming
Cheng Chia-Jen
Karta Tjandra Winata
Yang Daniel
Yu Hsiu-Mei
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Wilson Allan R
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