Atomic layer deposition (ALD) method with enhanced...

Details Atomic layer deposition (ALD) method with enhanced... Atomic layer deposition (ALD) method with enhanced...

2007-01-30

2007-01-30

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21461

Reexamination Certificate

active

10672778

ABSTRACT:
An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.

REFERENCES:
patent: 6287965 (2001-09-01), Kang et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6916398 (2005-07-01), Chen et al.
patent: 2002/0066411 (2002-06-01), Chiang et al.

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