Coating apparatus – Gas or vapor deposition
Patent
1995-06-07
1998-05-26
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
118725, 118723E, 20429807, C23C 1600
Patent
active
057558868
ABSTRACT:
A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.
REFERENCES:
patent: 3200019 (1965-08-01), Scott et al.
patent: 3330694 (1967-07-01), Black et al.
patent: 3627590 (1971-12-01), Mammel
patent: 3661637 (1972-05-01), Sirtl
patent: 3721210 (1973-03-01), Helms et al.
patent: 3791342 (1974-02-01), Boyer et al.
patent: 3854443 (1974-12-01), Baerg
patent: 3934060 (1976-01-01), Burt et al.
patent: 3955163 (1976-05-01), Novak
patent: 4002512 (1977-01-01), Lim
patent: 4261762 (1981-04-01), King
patent: 4282268 (1981-08-01), Priestly et al.
patent: 4313783 (1982-02-01), Davies et al.
patent: 4457359 (1984-07-01), Holden
patent: 4466872 (1984-08-01), Einbinder
patent: 4492716 (1985-01-01), Yamazaki
patent: 4496609 (1985-01-01), McNeilly et al.
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4508161 (1985-04-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4527620 (1985-07-01), Pederson et al.
patent: 4535228 (1985-08-01), Mimura et al.
patent: 4550684 (1985-11-01), Mahawili
patent: 4563240 (1986-01-01), Shibata et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4567938 (1986-02-01), Turner
patent: 4575408 (1986-03-01), Bok
patent: 4576698 (1986-03-01), Gallagher et al.
patent: 4603466 (1986-08-01), Morley
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4625678 (1986-12-01), Shioya et al.
patent: 4640221 (1987-02-01), Barbee et al.
patent: 4640224 (1987-02-01), Bunch et al.
patent: 4647266 (1987-03-01), Turner et al.
patent: 4671204 (1987-06-01), Ballou
patent: 4680061 (1987-07-01), Lamont, Jr.
patent: 4687682 (1987-08-01), Koze
patent: 4693211 (1987-09-01), Ogami et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4709655 (1987-12-01), Van Mastrigt
patent: 4717596 (1988-01-01), Barbee et al.
patent: 4724621 (1988-02-01), Hobson et al.
patent: 4731255 (1988-03-01), Maeda et al.
patent: 4738748 (1988-04-01), Kisa
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4747368 (1988-05-01), Brien et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4768464 (1988-09-01), Hayashi et al.
patent: 4790262 (1988-12-01), Nakayama et al.
patent: 4791398 (1988-12-01), Sittler et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4846102 (1989-07-01), Ozias
patent: 4854263 (1989-08-01), Chang et al.
patent: 4857142 (1989-08-01), Syverson
patent: 4859625 (1989-08-01), Matsumoto
patent: 4872947 (1989-10-01), Wang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4990374 (1991-02-01), Keeley et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5044315 (1991-09-01), Ozias
patent: 5108792 (1992-04-01), Anderson et al.
patent: 5198034 (1993-03-01), Deboer et al.
patent: 5221556 (1993-06-01), Hawkins et al.
patent: 5230741 (1993-07-01), van de Ven et al.
patent: 5238499 (1993-08-01), van de Ven et al.
patent: 5244694 (1993-09-01), Ozias
patent: 5261960 (1993-11-01), Ozias
patent: 5269847 (1993-12-01), Anderson et al.
patent: 5273588 (1993-12-01), Foster et al.
patent: 5354715 (1994-10-01), Wang et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5374594 (1994-12-01), van de Ven et al.
patent: 5535834 (1996-07-01), Turner
patent: 5542298 (1996-08-01), Holden
M. King et al., "Experiments on Gas Cooling of Wafers", Nuclear Instruments and Methods, pp. 169-173, (1981).
E. Bogle-Rohwer et al., "Wall Profile Control in a Triode Etcher", Solid State Technology, pp. 251-255, (Apr. 1985).
W.N. Hammer, "Cooling Ion-Implantation Target", IBM Technical Disclosure Bulletin, vol. 19, No. 6, pp. 2270-2271, (Nov. 1976).
F.T. Turner et al., "Advances in Cassette-to-Cassette Sputtercoating Systems*", Solid State Technology, pp. 155-123, (Jul. 1993).
V. Hoffman et al., "Individual Water Metallization Utilizing Load-Locked, Close-Coupled Conical Magnetron Sputtering", Solid State Technology, pp. 105-111, (Feb. 1981).
P.S. Burggraaf, "Plasma Deposition Product Trends", Semiconductor International, pp. 23-32, (Mar. 1980).
E. Tanikawa et al., "Chemical Vapor Deposition in an Evacuated System", Chemical Vapor Deposition Wakefield and Blocher, eds., pp. 261-275, (1973).
R.A. Connell et al., "Magnetically Shaped R.F. Disharge for Polymer Film Formation", J. Electrochem. Soc., vol. 112, pp. 1198-1200, (1965).
"Part 2b-Deposited Dielectrics for VLSI",Semiconductor International, Werner Kern, RCA Laboratories, David Sarnoff Research Center, Princeton, NJ, pp. 122-129, (Jul. 1985).
A.C. Adams, "Dielectric and Polysilicon Film Deposition", VLSI Technology (McGraw Hill New York), pp. 93-129, (1983).
D.N.K. Wang, et al., "Advanced CVD Technology", Proc. 1st International Symposium ULSI Science and Technology, pp. 712-723, (1987).
A.C. Adams, "Plasma-Assisted Deposition of Dielectric Films", Proceedings of the Symposium of on Reduced Temperature Processing for VLSI (eds. Reig and Srinivasas), pp. 111-131, (1986).
Jiang Ruolian et al., "Plasma-Enhanced CVD SiO.sub.2 Films on InP and Study of C-V Characteristics in InP-MIS Structures", Chinese Journal of Semiconductors, vol. 6, No. 4, pp. 429-432, (1985).
K.P. Pande et al., A Novel Low-Temperature Method of SiO.sub.2 Film Deposition for MOSFET Applications, J. Electronic Materials, vol. 13, No. 3, pp. 593-602, (1984).
U. Mackens et al., "Plasma-Enhanced Chemically Vapour-Deposited Silicon Dioxide for Metal/Oxide/Semiconductor Structures on InSb", Thin Solid Films, vol. 97, pp. 53-61, (1982).
J. Woodward et al., "The Deposition of Insulators Onto InP Using Plasma-Enhanced Chemical Vapour Deposition*", Thin Solid Films, vol. 85, pp. 61-69, (1981).
E.B. Priestley et al., "Deposition and Characterization of Thin SiO.sub.2 Films", Thin Solid Films, vol. 69, pp. 39-52, (1980).
P. Mazerolles et al., "Formation of Amorphous Semiconductors by Chemical Vapour Deposition From Organogermanium Compounds*", Silicon, Germanium, Tin and Lead Compounds, pp. 155-183, (ed. Gielen 1986).
A.K. Sinha, "Plasma Enhanced Chemical Vapor Deposition--A Review", Electrochem. Soc. Ext., Abstract No. 242, pp. 625-627, (1976).
H.F. Sterling et al., "Chemical Vapour Deposition Promoted by r.f. Discharge", Solid-State Electronics, vol. 8, pp. 653-654, (1965).
L. L. Alt. et al., "Low-Temerature Deposition of Silicon Oxide Films", J. Electrochem. Soc., vol. 110, p. 465, (1963).
K.M. Eisele, "Etching of SiO.sub.2 In a Narrowly Confined Plasma of High Power Density", J. Vac. Sci Technol. B4(5), pp. 1227-1232, (Sep./Oct. 1986).
G.S. Oehrlein, "Investigation of Reactive-Ion-Etching-Related Fluorocarbon Film Deposition Onto Silicon and a New Method for Surface Residue Removal", J. Electrochem. Soc.: Solid-State Science and Technology, pp. 1002-1008, (May 1986).
Chemical Abstracts, vol. 101, No. 20, p. 292, (Nov. 1984).
T. Fujino et al., "Preparation and Application of Organosilicon Compounds for CVD Process", Oyo Buturi, vol. 53, No. 11, pp. 956-961, (Nov. 1984).
D.J. DiMaria et al., "Use of Composite Silicon-Rich SiO.sub.2 Layers of Off-Stoichio-Metric CVD SiO.sub.2 and Si.sub.2 Layers for Improvement of Poly 1 to Poly 2 Dielectric", IBM Technical Disclosure Bulletin, vol. 25, No. 12, p. 6417, (May 1983).
J.S. Basi et al., "Plasma-Oxide-Filled Deep Dielectric Isolation", IBM Technical Disclosure Bulletin, vol. 25, No. 8, pp. 4405-4406, (Jan. 1983).
J.P. Gerault et al., "Elaboration et Caracterisation de Couches Minces de Carbure de Silicium Amorphe non Stoechiometrique: Comparison
Adamik John A.
Collins Kenneth S.
Law Kam S.
Leung Cissy
Maydan Dan
Applied Materials Inc.
Breneman R. Bruce
Lund Jeffrie R.
LandOfFree
Apparatus for preventing deposition gases from contacting a sele does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for preventing deposition gases from contacting a sele, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for preventing deposition gases from contacting a sele will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1955962