Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-05-25
2010-10-26
Nguyen, Nam X (Department: 1795)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C204S192150, C204S192170, C204S298060, C204S298080
Reexamination Certificate
active
07820020
ABSTRACT:
A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.
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Brown Karl M.
Hofmann Ralf
Mehta Vineet
Pipitone John
Applied Materials Inc.
Brayton John
Law Office of Robert M. Wallace
Nguyen Nam X
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