Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-20
2005-12-20
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S660000, C438S688000
Reexamination Certificate
active
06977217
ABSTRACT:
In one embodiment, a via structure includes a liner, a barrier layer over the liner, and an aluminum layer over the barrier layer. The barrier layer helps minimize reaction between the aluminum layer and the liner, thus helping minimize void formation in the via. The liner and the barrier layer may be deposited in-situ by ionized metal plasma (IMP) physical vapor deposition (PVD). In one embodiment, the liner comprises titanium, while the barrier layer comprises titanium nitride.
REFERENCES:
patent: 5305519 (1994-04-01), Yamamoto et al.
patent: 5668398 (1997-09-01), Havemann et al.
patent: 5918149 (1999-06-01), Besser et al.
patent: 5962923 (1999-10-01), Xu et al.
patent: 5963830 (1999-10-01), Wang et al.
patent: 5998296 (1999-12-01), Saran et al.
patent: 6004876 (1999-12-01), Kwon et al.
patent: 6075293 (2000-06-01), Li et al.
patent: 6120844 (2000-09-01), Chen et al.
patent: 6132564 (2000-10-01), Licata
patent: 6136709 (2000-10-01), Schmidbauer et al.
patent: 6204200 (2001-03-01), Shieh et al.
patent: 6368880 (2002-04-01), Singhvi et al.
patent: 6411349 (2002-06-01), Nakazawa et al.
Advanced Interconnects, 2000 IEDM Short Course.
Ben-Tzur Mira
Dai Feng
Ivanov Ivan P.
Lau Gorley L.
Yang Chan-Lon
Cypress Semiconductor Corporation
Nguyen Ha Tran
Okamoto & Benedicto LLP
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