Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
Inventor
active
Aluminum-filled via structure with barrier layer
Method to achieve STI planarization
Trench-based capacitor for integrated circuits
No associations
LandOfFree
Feng Dai does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Feng Dai, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Feng Dai will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-P-2823570