Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-11
2011-01-11
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C427S252000, C427S299000, C438S656000, C438S048000
Reexamination Certificate
active
07867900
ABSTRACT:
Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.
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Guo Ted
Hassan Mohd Fadzli Anwar
Lee Wei Ti
Yu Sang-Ho
Applied Materials Inc.
Nguyen Ha Tran T
Pathak Shantanu C
Patterson & Sheridan LLP
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